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• W2964244485 abstract "We establish the well-posedness of the transient van Roosbroeck system in three space dimensions under realistic assumptions on the data: non-smooth domains, discontinuous coefficient functions and mixed boundary conditions. Moreover, within this analysis, recombination terms may be concentrated on surfaces and interfaces and may not only depend on charge-carrier densities, but also on the electric field and currents. In particular, this includes Avalanche recombination. The proofs are based on recent abstract results on maximal parabolic and optimal elliptic regularity of divergence-form operators." @default.
• W2964244485 created "2019-07-30" @default.
• W2964244485 creator A5032350740 @default.
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• W2964244485 date "2019-09-01" @default.
• W2964244485 modified "2023-10-01" @default.
• W2964244485 title "The 3D transient semiconductor equations with gradient-dependent and interfacial recombination" @default.
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• W2964244485 doi "https://doi.org/10.1142/s0218202519500350" @default.
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