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- W2964296871 abstract "The integration of III-V sub-cells with a cheap active Si substrate hasthe potential to achieve high-efficiency multi-junction solar cells. Growthof III-V materials with low defect density on Si is difficult because ofthe different crystal structure. GaP grown on Si can facilitate thetransition between Si and III-V materials due to the small latticemismatch. The pseudomorphic GaP/Si quasisubstrates can allow for subsequentintegration of planar and nanowire (NW)-based III-V structures. The planarstructures are commonly grown in [100] orientation, while the NWs growpreferably along [111] direction. The present work studies the preparationof the Si bottom cell and pseudomorphic GaP/Si quasisubstrates bymetalorganic chemical vapor phase deposition (MOCVD). In order to achievelow defect densities in the III-V buffer layers the atomic step structureof Si(100) substrates is decisive to avoid antiphase disorder in the III-Vepilayers. Likewise, the polarity of the GaP epilayer has to be controlledvia the Si(111) surface preparation in order to achieve vertical NW growth.Growth processes in MOCVD ambient are highly complicated due to thepresence of complex metalorganic sources, the process gas (H2) whichstrongly affects step formation on Si, and the competition betweenenergetic and kinetic processes. To achieve precise control over the Sisurface preparation we apply in situ reflection anisotropy spectroscopy(RAS) and correlate signals obtained at crucial steps of the process withultra-high vacuum-based (UHV) surface sensitive methods. Both Si surfacesstrongly interact with the H2 process gas, which leads to monohydridetermination of the surfaces. The collector in Si(100) and in Si(111) can beformed by annealing in under either TBP or TBAs precursor, which leads to Por As in-diffusion into the Si. After collector formation additionalannealing in H2 is necessary to recover a smooth surface suitable for GaPnucleation. To achieve GaP(111) with B-type polarity, which is required forvertical III-V NW growth, we developed a specific procedure involvingpre-termination of Si(111) substrate with As. Thereby, the polarity of GaPepilayers grown on Si(111) can be controlled by the termination of the Sisurface: either by H2 or As. In case of Si(100) 6°, we apply in situ RASto control the prevalence of the majority domain on the surface independence of the As source (background Asx or TBAs) and cooling procedure.This allows to control the sublattice orientation of subsequently grown,single domain GaP/Si(100) epilayer. GaP/Si quasisubstrates withwell-defined interface and a p-n junction within Si, which are suitable foreither planar or NW-based photovoltaic multi-junction structures, can thusbe prepared in a controllable manner in MOCVD ambient." @default.
- W2964296871 created "2019-07-30" @default.
- W2964296871 creator A5087887061 @default.
- W2964296871 date "2018-05-22" @default.
- W2964296871 modified "2023-09-23" @default.
- W2964296871 title "Controlling Si(111) and Si(100) surfaces for subsequent GaP heteroepitaxy in CVD ambient" @default.
- W2964296871 hasPublicationYear "2018" @default.
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