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- W2964978319 abstract "A new experimental framework for the characterization of defects in semiconductors is demonstrated. Through the direct, energy-resolved correlation of three analytical techniques spanning six orders of magnitude in spatial resolution, a critical mid-bandgap electronic trap level (EV + 0.56 eV) within Ag0.2Cu0.8In1−xGaxSe2 is traced to its nanoscale physical location and chemical source. This is achieved through a stepwise, site-specific correlated characterization workflow consisting of device-scale (≈1 mm2) deep level transient spectroscopy (DLTS) to survey the traps present, scanning probe–based DLTS (scanning-DLTS) for mesoscale-resolved (hundreds of nanometers) mapping of the target trap state's spatial distribution, and scanning transmission electron microscope based electron energy-loss spectroscopy (STEM-EELS) and X-ray energy-dispersive spectroscopy for nanoscale energy-, structure, and chemical-resolved investigation of the defect source. This first demonstration of the direct observation of sub-bandgap defect levels via STEM-EELS, combined with the DLTS methods, provides strong evidence that the long-suspected CuIn/Ga substitutional defects are indeed the most likely source of the EV + 0.56 eV trap state and serves as a key example of this approach for the fundamental identification of defects within semiconductors, in general." @default.
- W2964978319 created "2019-08-13" @default.
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- W2964978319 date "2019-08-05" @default.
- W2964978319 modified "2023-10-03" @default.
- W2964978319 title "Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe <sub>2</sub> Using Electron Energy‐Loss Spectroscopy in the Scanning Transmission Electron Microscope" @default.
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- W2964978319 doi "https://doi.org/10.1002/aenm.201901612" @default.
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