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• W2965143824 endingPage "P429" @default.
• W2965143824 startingPage "P423" @default.
• W2965143824 abstract "The surface reaction kinetics of chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS; CH3SiCl3) and hydrogen were studied to identify gaseous species contributing to SiC film formation. First, SiC was deposited into relatively deep microtrenches with aspect ratios of up to 64:1, and the film-thickness profiles within the deep microtrenches were analyzed to evaluate the sticking probabilities (η) of the film-forming species. Two film-forming species were identified with η of 10−2 and 10−5 at 1,000°C. Next, their partial pressures at several positions in the reactor were estimated from their respective η and deposition rates. The low-η species was identified as MTS by comparing the partial pressure measured by quadrupole mass spectrometer with that calculated by elementary reaction simulations. Similarly, the high-η species was likely CH2SiCl3 generated via gas-phase decomposition of MTS. Such identification is crucial to optimize the deposition conditions and also design of a reactor." @default.
• W2965143824 created "2019-08-13" @default.
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• W2965143824 date "2019-01-01" @default.
• W2965143824 modified "2023-10-02" @default.
• W2965143824 title "Identification of Film-Forming Species during SiC-CVD of CH₃SiCl₃/H₂ by Exploiting Deep Microtrenches" @default.
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• W2965143824 doi "https://doi.org/10.1149/2.0191908jss" @default.
• W2965143824 hasPublicationYear "2019" @default.
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