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• W2965634037 abstract "We report the effects of the nitride passivation layer on the structural, electrical, and interfacial properties of Ge metal-oxide-semiconductor (MOS) devices with a hafnium oxide (HfO₂) gate dielectric layer deposited on p-type 〈100〉 Ge substrates. X-ray photoelectron spectroscopy analysis confirmed the chemical states and formation of HfO₂/Ge₃N₄ on Ge. The interfacial quality and thickness of the layers grown on Ge were confirmed by high-resolution transmission electron microscopy. In addition, the effects of post-deposition annealing (PDA) on the HfO₂/Ge₃N₄/Ge and HfO₂/Ge samples at 400 °C in an (FG+O₂) ambient atmosphere for 30 min were studied. After PDA, the HfO₂/Ge₃N₄/Ge MOS device showed a higher dielectric constant (k) of ~21.48 and accumulation capacitance of 1.2 nF, smaller equivalent oxide thickness (EOT) of 1.2 nm, and lower interface trap density (Dit) of 4.9×1011 cm-2 eV-1 and oxide charges (Qeff) of 7.8×1012 cm-2 than the non-annealed sample. The I-V analysis showed that the gate leakage current density of the HfO₂/Ge₃N₄/Ge sample (0.3-1 nA cm-2 at Vg = 1 V) was half of that of the HfO₂/Ge sample. Moreover, the barrier heights of the samples were extracted from the Fowler-Nordheim plots. These results indicated that nitride passivation is crucial to improving the structural, interfacial, and electrical properties of Ge-based MOS devices." @default.
• W2965634037 created "2019-08-13" @default.
• W2965634037 creator A5015096473 @default.
• W2965634037 creator A5026986287 @default.
• W2965634037 creator A5035760281 @default.
• W2965634037 creator A5044076036 @default.
• W2965634037 creator A5047203272 @default.
• W2965634037 creator A5049338136 @default.
• W2965634037 creator A5072765564 @default.
• W2965634037 creator A5075460184 @default.
• W2965634037 creator A5079402887 @default.
• W2965634037 creator A5081599926 @default.
• W2965634037 creator A5087809166 @default.
• W2965634037 date "2020-02-01" @default.
• W2965634037 modified "2023-09-23" @default.
• W2965634037 title "Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices" @default.
• W2965634037 doi "https://doi.org/10.1166/jnn.2020.16934" @default.
• W2965634037 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/31383103" @default.
• W2965634037 hasPublicationYear "2020" @default.
• W2965634037 type Work @default.
• W2965634037 sameAs 2965634037 @default.
• W2965634037 citedByCount "2" @default.
• W2965634037 countsByYear W29656340372021 @default.
• W2965634037 countsByYear W29656340372022 @default.
• W2965634037 crossrefType "journal-article" @default.
• W2965634037 hasAuthorship W2965634037A5015096473 @default.
• W2965634037 hasAuthorship W2965634037A5026986287 @default.
• W2965634037 hasAuthorship W2965634037A5035760281 @default.
• W2965634037 hasAuthorship W2965634037A5044076036 @default.
• W2965634037 hasAuthorship W2965634037A5047203272 @default.
• W2965634037 hasAuthorship W2965634037A5049338136 @default.
• W2965634037 hasAuthorship W2965634037A5072765564 @default.
• W2965634037 hasAuthorship W2965634037A5075460184 @default.
• W2965634037 hasAuthorship W2965634037A5079402887 @default.
• W2965634037 hasAuthorship W2965634037A5081599926 @default.
• W2965634037 hasAuthorship W2965634037A5087809166 @default.
• W2965634037 hasConcept C113196181 @default.
• W2965634037 hasConcept C119599485 @default.
• W2965634037 hasConcept C127413603 @default.
• W2965634037 hasConcept C133386390 @default.
• W2965634037 hasConcept C159985019 @default.
• W2965634037 hasConcept C16317505 @default.
• W2965634037 hasConcept C165801399 @default.
• W2965634037 hasConcept C166972891 @default.
• W2965634037 hasConcept C171250308 @default.
• W2965634037 hasConcept C172385210 @default.
• W2965634037 hasConcept C175708663 @default.
• W2965634037 hasConcept C185592680 @default.
• W2965634037 hasConcept C191897082 @default.
• W2965634037 hasConcept C192562407 @default.
• W2965634037 hasConcept C194760766 @default.
• W2965634037 hasConcept C2361726 @default.
• W2965634037 hasConcept C2777855556 @default.
• W2965634037 hasConcept C2779227376 @default.
• W2965634037 hasConcept C2779851234 @default.
• W2965634037 hasConcept C33574316 @default.
• W2965634037 hasConcept C36003996 @default.
• W2965634037 hasConcept C42360764 @default.
• W2965634037 hasConcept C43617362 @default.
• W2965634037 hasConcept C49040817 @default.
• W2965634037 hasConcept C52780932 @default.
• W2965634037 hasConcept C544956773 @default.
• W2965634037 hasConcept C550623735 @default.
• W2965634037 hasConceptScore W2965634037C113196181 @default.
• W2965634037 hasConceptScore W2965634037C119599485 @default.
• W2965634037 hasConceptScore W2965634037C127413603 @default.
• W2965634037 hasConceptScore W2965634037C133386390 @default.
• W2965634037 hasConceptScore W2965634037C159985019 @default.
• W2965634037 hasConceptScore W2965634037C16317505 @default.
• W2965634037 hasConceptScore W2965634037C165801399 @default.
• W2965634037 hasConceptScore W2965634037C166972891 @default.
• W2965634037 hasConceptScore W2965634037C171250308 @default.
• W2965634037 hasConceptScore W2965634037C172385210 @default.
• W2965634037 hasConceptScore W2965634037C175708663 @default.
• W2965634037 hasConceptScore W2965634037C185592680 @default.
• W2965634037 hasConceptScore W2965634037C191897082 @default.
• W2965634037 hasConceptScore W2965634037C192562407 @default.
• W2965634037 hasConceptScore W2965634037C194760766 @default.
• W2965634037 hasConceptScore W2965634037C2361726 @default.
• W2965634037 hasConceptScore W2965634037C2777855556 @default.
• W2965634037 hasConceptScore W2965634037C2779227376 @default.
• W2965634037 hasConceptScore W2965634037C2779851234 @default.
• W2965634037 hasConceptScore W2965634037C33574316 @default.
• W2965634037 hasConceptScore W2965634037C36003996 @default.
• W2965634037 hasConceptScore W2965634037C42360764 @default.
• W2965634037 hasConceptScore W2965634037C43617362 @default.
• W2965634037 hasConceptScore W2965634037C49040817 @default.
• W2965634037 hasConceptScore W2965634037C52780932 @default.
• W2965634037 hasConceptScore W2965634037C544956773 @default.
• W2965634037 hasConceptScore W2965634037C550623735 @default.
• W2965634037 hasLocation W29656340371 @default.
• W2965634037 hasLocation W29656340372 @default.
• W2965634037 hasOpenAccess W2965634037 @default.
• W2965634037 hasPrimaryLocation W29656340371 @default.
• W2965634037 hasRelatedWork W1980675959 @default.
• W2965634037 hasRelatedWork W1999586314 @default.
• W2965634037 hasRelatedWork W2011742481 @default.
• W2965634037 hasRelatedWork W2061332219 @default.
• W2965634037 hasRelatedWork W2064625907 @default.
• W2965634037 hasRelatedWork W2071802557 @default.

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