Matches in SemOpenAlex for { <https://semopenalex.org/work/W2965989874> ?p ?o ?g. }
- W2965989874 endingPage "282" @default.
- W2965989874 startingPage "229" @default.
- W2965989874 abstract "Long-lasting efforts have been devoted to perfecting the crystalline quality of III–V compound semiconductors on silicon substrates, where epitaxial growth by MOCVD systems is of particular interest for their suitability in massive production in a cost-effective manner. Moreover, in the recent decade, monolithic integration of III–V lasers on Si via the heteroepitaxy approach is in great demand to fulfill the boosting requirement of high speed, large capacity communications. In this chapter, we will comprehensively review the approaches and methodologies to circumvent the fundamental challenges in III–V materials grown on Si by MOCVD, focusing on the dominant GaAs and InP binaries on Si. With this, the previous achievements and current on-going work on the epitaxial growth of lasers on silicon emitting at near-infrared wavelengths are further presented in the second part." @default.
- W2965989874 created "2019-08-13" @default.
- W2965989874 creator A5011896488 @default.
- W2965989874 creator A5017383785 @default.
- W2965989874 date "2019-01-01" @default.
- W2965989874 modified "2023-10-01" @default.
- W2965989874 title "Growth of III–V semiconductors and lasers on silicon substrates by MOCVD" @default.
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