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- W2966734367 abstract "In this paper, we demonstrate a tunable Schottky diode based on amorphous indium-gallium-zinc-oxide (a-IGZO) film with high performance for rectifying circuit and bipolar one diode-one resistor (1D1R) crossbar applications. By modulating the oxygen content in the a-IGZO film, the device shows adjustable behavior. Under the high oxygen content condition, the device displays outstanding diode features with a large rectification ratio up to 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> at ±1 V and a high forward current density of 100 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at ±1 V when used Cu as the top electrode. The thermionic emission model is proposed to explain the Schottky diode behavior. And by utilizing the superior rectifying performance, we successfully demonstrate the dynamic rectifying application. In addition, we combine the optimized Schottky diode device with the bipolar-type resistive random access memory (RRAM) device to investigate the Schottky diode device in 1D1R crossbar application. As a result of its tunable nature and low processing temperature, the a-IGZO Schottky diode is a promising element for rectifying circuit and bipolar 1D1R crossbar applications." @default.
- W2966734367 created "2019-08-13" @default.
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- W2966734367 date "2019-09-01" @default.
- W2966734367 modified "2023-10-14" @default.
- W2966734367 title "Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications" @default.
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- W2966734367 doi "https://doi.org/10.1109/ted.2019.2928792" @default.
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