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• W2967376062 abstract "ABSTRACT ATOMIC LAYER DEPOSITION (ALD) AND ATOMIC LAYER ETCHING (ALE) OF THIN FILMS: SYNTHESIS AND CHARACTERIZATION OF A NEW CLASS OF ALD PRECURSORS, ALD OF PrAlO3 THIN FILMS, AND THERMAL ALE OF COBALT METAL FILMS by WATHSALA LAKMALI IWADUNNA WADUGE February 2019 Advisor: Professor Charles H. Winter Major: Chemistry (Inorganic) Degree: Doctor of Philosophy ALD is an attractive thin film deposition technique due to its unique self-limiting growth behavior and the ability to achieve Angstrom level thickness control. Alternative thin film deposition techniques such as CVD and PVD are unable to attain the conformal and Angstrom level film growth which are of great significance to future microelectronics device fabrication demands. Because ALD proceeds by surface reactions, the precursors which are used for ALD should have unique properties. Therefore, the design and synthesis of these ALD precursors are challenging. Transition metal ALD has not been well developed due to a lack of good ALD precursor chemistry. Herein, mid-to-late transition metal complexes containing enaminolate and carbohydrazide ligands have been synthesized and characterized. Additionally, the thermal properties and reactivity of these complexes were determined. Enaminolate ligand-containing chromium, manganese, iron, cobalt, and nickel complexes were isolated as pure solids by vacuum sublimation. TGA of these metal complexes shows a single step weight loss with minimum non-volatile residuals. Manganese complexes show lower volatility compared to the other metal complexes. However, the highest thermal stability (303 oC) was observed for manganese complexes. Interestingly these metal complexes thermally decompose to their metals at high temperatures and show high reactivity towards reducing agents. Similar to enaminolate containing metal complexes, newly synthesized carbohydrazide-containing metal complexes also display promising thermal properties and reactivity to use as ALD precursors. Detailed synthesis procedures, precursor characterizations of these metal complexes are reported in this thesis, Chapter 2. Following Moore’s Law, the device size in the microelectronics industry is dramatically shrinking. SiO2 has been used as the gate dielectric material in MOSFETs until recently, and it has been partially replaced with HfO2. However, the need for replacing SiO2 with an efficient high-k material is increasingly growing. Binary and ternary lanthanide oxides are potential candidates to use as high-k materials on MOSFETs. Additionally, a polar non-polar system containing ABO3/SrTiO3 is important in creating 2-DEGs. Herein ALD of Pr2O3 and nearly stoichiometric PrAlO3 are developed and discussed. Characterization of the Pr2O3 films was difficult due to their hygroscopic nature. Incorporation of stable Al2O3 minimizes the Pr2O3 film degradation. Additionally, 1, AlMe3, and water were used…" @default.
• W2967376062 created "2019-08-22" @default.
• W2967376062 creator A5036054173 @default.
• W2967376062 creator A5079374348 @default.
• W2967376062 date "2019-01-01" @default.
• W2967376062 modified "2023-09-24" @default.
• W2967376062 title "Atomic Layer Deposition (ald) And Atomic Layer Etching (ale) Of Thin Films: Synthesis And Characterization Of A New Class Of Ald Precursors, Ald Of Pralo3 Thin Films, And Thermal Ale Of Cobalt Metal Films" @default.
• W2967376062 hasPublicationYear "2019" @default.
• W2967376062 type Work @default.
• W2967376062 sameAs 2967376062 @default.
• W2967376062 citedByCount "0" @default.
• W2967376062 crossrefType "journal-article" @default.
• W2967376062 hasAuthorship W2967376062A5036054173 @default.
• W2967376062 hasAuthorship W2967376062A5079374348 @default.
• W2967376062 hasConcept C106773901 @default.
• W2967376062 hasConcept C127413603 @default.
• W2967376062 hasConcept C161790260 @default.
• W2967376062 hasConcept C171250308 @default.
• W2967376062 hasConcept C178790620 @default.
• W2967376062 hasConcept C179104552 @default.
• W2967376062 hasConcept C185592680 @default.
• W2967376062 hasConcept C19067145 @default.
• W2967376062 hasConcept C192562407 @default.
• W2967376062 hasConcept C2781083472 @default.
• W2967376062 hasConcept C42360764 @default.
• W2967376062 hasConcept C515602321 @default.
• W2967376062 hasConcept C544153396 @default.
• W2967376062 hasConcept C59061564 @default.
• W2967376062 hasConcept C69544855 @default.
• W2967376062 hasConceptScore W2967376062C106773901 @default.
• W2967376062 hasConceptScore W2967376062C127413603 @default.
• W2967376062 hasConceptScore W2967376062C161790260 @default.
• W2967376062 hasConceptScore W2967376062C171250308 @default.
• W2967376062 hasConceptScore W2967376062C178790620 @default.
• W2967376062 hasConceptScore W2967376062C179104552 @default.
• W2967376062 hasConceptScore W2967376062C185592680 @default.
• W2967376062 hasConceptScore W2967376062C19067145 @default.
• W2967376062 hasConceptScore W2967376062C192562407 @default.
• W2967376062 hasConceptScore W2967376062C2781083472 @default.
• W2967376062 hasConceptScore W2967376062C42360764 @default.
• W2967376062 hasConceptScore W2967376062C515602321 @default.
• W2967376062 hasConceptScore W2967376062C544153396 @default.
• W2967376062 hasConceptScore W2967376062C59061564 @default.
• W2967376062 hasConceptScore W2967376062C69544855 @default.
• W2967376062 hasLocation W29673760621 @default.
• W2967376062 hasOpenAccess W2967376062 @default.
• W2967376062 hasPrimaryLocation W29673760621 @default.
• W2967376062 hasRelatedWork W1569807553 @default.
• W2967376062 hasRelatedWork W1976180897 @default.
• W2967376062 hasRelatedWork W2035931858 @default.
• W2967376062 hasRelatedWork W2039681571 @default.
• W2967376062 hasRelatedWork W2065208860 @default.
• W2967376062 hasRelatedWork W2084951526 @default.
• W2967376062 hasRelatedWork W2100794489 @default.
• W2967376062 hasRelatedWork W2132035560 @default.
• W2967376062 hasRelatedWork W2222889561 @default.
• W2967376062 hasRelatedWork W2250106965 @default.
• W2967376062 hasRelatedWork W2512973443 @default.
• W2967376062 hasRelatedWork W2555693657 @default.
• W2967376062 hasRelatedWork W2948722396 @default.
• W2967376062 hasRelatedWork W2951807141 @default.
• W2967376062 hasRelatedWork W3032315548 @default.
• W2967376062 hasRelatedWork W3039404926 @default.
• W2967376062 hasRelatedWork W3195006072 @default.
• W2967376062 hasRelatedWork W849603562 @default.
• W2967376062 hasRelatedWork W2149050142 @default.
• W2967376062 hasRelatedWork W3103240320 @default.
• W2967376062 isParatext "false" @default.
• W2967376062 isRetracted "false" @default.
• W2967376062 magId "2967376062" @default.
• W2967376062 workType "article" @default.