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• W2967746564 startingPage "087802" @default.
• W2967746564 abstract "The epitaxial growth of novel GaN-based light-emitting diode (LED) on Si (100) substrate has proved challenging. Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells (MQWs) with different well widths are grown on semi-polar ( <?CDATA $1bar{1}01$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mn>1</mml:mn> <mml:mover accent=true> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> <mml:mrow> <mml:mo>¯</mml:mo> </mml:mrow> </mml:mover> <mml:mn>01</mml:mn> </mml:math> ) planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission." @default.
• W2967746564 created "2019-08-22" @default.
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• W2967746564 date "2019-08-01" @default.
• W2967746564 modified "2023-10-05" @default.
• W2967746564 title "Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*" @default.
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• W2967746564 doi "https://doi.org/10.1088/1674-1056/28/8/087802" @default.
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