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• W2968299675 abstract "We propose double-gated n-type WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> FETs with low leakage, low hysteresis top gate high-k dielectric stack. The top gate dielectric layer is deposited by HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ALD on an Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> seed layer obtained from the evaporation and oxidation by air exposure of a 1.5 nm Al layer. When operated under back gate control, the fabricated WSe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> FETs behave as n-type enhancement transistors with ON/OFF current ratios exceeding 6 orders of magnitude and a ON current close to 1 μA/μm at a drain bias of 100 mV. An applied negative top gate bias determines a much steeper turn-on of the back gated transfer characteristic and a reduction of the observed hysteresis. Top gate devices behave as n-type depletion FETs, reaching a ION/IOFF ratio larger than 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> under positive bias applied to the back gate. The electron mobility, extracted using the Y-function method, was estimated to be 22.15 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> s <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> under a drain bias of 1 mV. We characterize the hysteresis dynamics in our devices, demonstrating a substantial improvement with respect to comparable top gated MoS <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> FETs." @default.
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• W2968299675 date "2019-01-01" @default.
• W2968299675 modified "2023-10-18" @default.
• W2968299675 title "Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric" @default.
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• W2968299675 doi "https://doi.org/10.1109/jeds.2019.2933745" @default.
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