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- W2968510658 abstract "Search for an efficient and low cost alternative to Silicon-wafer solar cells has led to the popularity of thin film photovoltaics. Tin Sulphide (SnS), being an earth abundant, cheap, and less toxic semiconducting material [1,2] with a high absorption coefficient (> 104 cm-1) in visible range [3], stands out as a potential candidate. Theoretical simulations by Loferski et al. [4] predicted 24% efficiency for SnS based solar cells, however maximum efficiency achieved to date is far less than the predicted value. In this work, a detailed analysis of the poor performance of CdS/p-SnS heterojunction solar cells is carried out. ITO/CdS/p-SnS/Au solar cells with varying thickness of p-SnS absorber layer were made using a thermal evaporation technique. Best conversion efficiency of 0.005% was obtained for the cell having p-SnS layer of thickness 1068nm. Defects present in p-SnS thin films along with the band misalignment at the interface of CdS/SnS layers lead to poor performance of the cell by increasing the trap-assisted tunneling recombinations at the junction. Ideality factor was calculated from the dark J-V characteristics, using the modified piecewise model [5] to quantify the junction characteristics. It was found that the ideality factor has a direct impact on the device performance, with efficiency decreasing as the ideality factor of the junction increases." @default.
- W2968510658 created "2019-08-22" @default.
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- W2968510658 date "2018-04-18" @default.
- W2968510658 modified "2023-09-22" @default.
- W2968510658 title "Investigating Reasons for Poor Performance of CdS/p-SnS Solar Cells" @default.
- W2968510658 hasPublicationYear "2018" @default.
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