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• W2968607574 abstract "TFETs have emerged as the potential candidate for future ultralow-power applications. However, the unidirectionality and poor drive current are the biggest hurdles for their deployment in static random-access memories (SRAMs), as they critically impact the write operation. In this article, first, we propose a new device structure with dual-pocket double-gate tunnel FET (DP-DGTFET) based on the earlier p-n-i-n device (SP-DGTFET). The proposed device shows improved characteristics in terms of I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> , I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> , and SS with comparable IOFF. The SRAM cells designed using the proposed device significantly improve the write margin (WM). The DP-DGTFET-based outward access-6T (O-6T) cell enhances the WM as high as 18× compared with its SP-DGTFET counterpart at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dd</sub> = 0.7 V. Subsequently, a novel 7T SRAM cell is also proposed to further enhance the circuit performance particularly in terms of write-ability. The proposed cell utilizes separate read buffer and column voltage collapse write assist to enhance the read and write stabilities. We also investigate the feasibility of these pocket devices for several other configurations of SRAM cells. The proposed 7T cell designed using new dual-pocket device offers 8× higher WM, 1.3× smaller write delay, similar RSNM and read delay while consuming 2.2× smaller write power, and similar read power compared to the existing 7T cell (at V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>dd</sub> = 0.5 V). The proposed cell also successfully eliminates half-selected disturb that occurs in the selected column due to voltage collapse. The proposed cell, therefore, could be a good choice for applications that demand high stability and low power requirement." @default.
• W2968607574 created "2019-08-22" @default.
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• W2968607574 date "2019-09-01" @default.
• W2968607574 modified "2023-10-05" @default.
• W2968607574 title "TFET-Based Robust 7T SRAM Cell for Low Power Application" @default.
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• W2968607574 doi "https://doi.org/10.1109/ted.2019.2931567" @default.
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