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- W2969112095 abstract "This paper is about the study of the electrical properties of transparent gate thin film transistors (TGTFT) at normal room temperature. TG-TFT a 10 nm device is designed using indium tin oxide (ITO) as the gate material. Source and drain are 4nm long each. Drain current is compared with the conventional TFT device drain current and there is a significant increase by 12.29% from the conventional TFT. The transfer characteristics of TFT are provided with Vth as 0.4 V, and that of conventional one was 0.3V. The electrical characteristics of the device generated are also studied and compared to the conventional one, and better results were shown by the proposed device. Later on, the comparison was drawn between the valence and the conduction band energy of TGTFT and C-TFT." @default.
- W2969112095 created "2019-08-22" @default.
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- W2969112095 date "2019-01-01" @default.
- W2969112095 modified "2023-09-25" @default.
- W2969112095 title "TCAD analysis of transparent gate thin film transistor (TFT) for high performance applications" @default.
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- W2969112095 doi "https://doi.org/10.1063/1.5120917" @default.
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