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• W2969271188 abstract "The interaction of microstructure defects is regarded as a possible tool for the reduction of the defect density and improvement of the crystal quality. In this study, this general approach is applied to reduce the density of threading dislocations in GaN crystals grown using high-temperature vapor phase epitaxy directly on (0001)-oriented sapphire substrates. The GaN crystals under study were deposited in three steps with different process temperatures, growth rates, and ammonia flows. The first GaN layer accommodates the lattice misfit between sapphire and gallium nitride. Thus, it contains a high number of randomly distributed threading dislocations. The next GaN layer, which is internally structured and defect-rich, bends and bunches these dislocations and facilitates their annihilation. The uppermost GaN layer mainly contains bunched threading dislocations terminating large areas of almost defect-free GaN. In order to be able to visualize and to quantify the microstructure changes in individual parts of the sandwich-like structure, the samples were investigated using nanofocused synchrotron diffraction, confocal micro-Raman spectroscopy, and transmission electron microscopy. The transmission electron microscopy provided information about the kind of microstructure defects and their mutual interaction. The synchrotron diffraction and the micro-Raman spectroscopy revealed the depth profiles of dislocation density and lattice parameters." @default.
• W2969271188 created "2019-08-29" @default.
• W2969271188 creator A5001527905 @default.
• W2969271188 creator A5001551080 @default.
• W2969271188 creator A5002072689 @default.
• W2969271188 creator A5012899078 @default.
• W2969271188 creator A5022187887 @default.
• W2969271188 creator A5038507914 @default.
• W2969271188 creator A5038591871 @default.
• W2969271188 creator A5044080396 @default.
• W2969271188 creator A5054457069 @default.
• W2969271188 creator A5056525492 @default.
• W2969271188 creator A5084129737 @default.
• W2969271188 date "2019-08-23" @default.
• W2969271188 modified "2023-10-17" @default.
• W2969271188 title "Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates" @default.
• W2969271188 cites W1599145788 @default.
• W2969271188 cites W1967960954 @default.
• W2969271188 cites W1968560043 @default.
• W2969271188 cites W1973632976 @default.
• W2969271188 cites W1973867308 @default.
• W2969271188 cites W1979507427 @default.
• W2969271188 cites W1984558938 @default.
• W2969271188 cites W1991988352 @default.
• W2969271188 cites W1993063280 @default.
• W2969271188 cites W1995955428 @default.
• W2969271188 cites W1996874423 @default.
• W2969271188 cites W2006067235 @default.
• W2969271188 cites W2008027744 @default.
• W2969271188 cites W2012372212 @default.
• W2969271188 cites W2018555308 @default.
• W2969271188 cites W2030368952 @default.
• W2969271188 cites W2031143274 @default.
• W2969271188 cites W2045285159 @default.
• W2969271188 cites W2045695245 @default.
• W2969271188 cites W2049000255 @default.
• W2969271188 cites W2050311330 @default.
• W2969271188 cites W2050542554 @default.
• W2969271188 cites W2050939776 @default.
• W2969271188 cites W2053016874 @default.
• W2969271188 cites W2057780857 @default.
• W2969271188 cites W2059486879 @default.
• W2969271188 cites W2060007702 @default.
• W2969271188 cites W2077057169 @default.
• W2969271188 cites W2078278324 @default.
• W2969271188 cites W2085029960 @default.
• W2969271188 cites W2087289714 @default.
• W2969271188 cites W2096720339 @default.
• W2969271188 cites W2118867693 @default.
• W2969271188 cites W2142668692 @default.
• W2969271188 cites W2148945027 @default.
• W2969271188 cites W2335180286 @default.
• W2969271188 cites W2542180694 @default.
• W2969271188 cites W2566497776 @default.
• W2969271188 cites W2575922440 @default.
• W2969271188 cites W2600450863 @default.
• W2969271188 cites W2609928600 @default.
• W2969271188 cites W2745625268 @default.
• W2969271188 cites W2756897961 @default.
• W2969271188 cites W2764055453 @default.
• W2969271188 cites W2770922432 @default.
• W2969271188 cites W2774425458 @default.
• W2969271188 cites W2776122614 @default.
• W2969271188 cites W2903980687 @default.
• W2969271188 doi "https://doi.org/10.1063/1.5092284" @default.
• W2969271188 hasPublicationYear "2019" @default.
• W2969271188 type Work @default.
• W2969271188 sameAs 2969271188 @default.
• W2969271188 citedByCount "4" @default.
• W2969271188 countsByYear W29692711882021 @default.
• W2969271188 countsByYear W29692711882022 @default.
• W2969271188 countsByYear W29692711882023 @default.
• W2969271188 crossrefType "journal-article" @default.
• W2969271188 hasAuthorship W2969271188A5001527905 @default.
• W2969271188 hasAuthorship W2969271188A5001551080 @default.
• W2969271188 hasAuthorship W2969271188A5002072689 @default.
• W2969271188 hasAuthorship W2969271188A5012899078 @default.
• W2969271188 hasAuthorship W2969271188A5022187887 @default.
• W2969271188 hasAuthorship W2969271188A5038507914 @default.
• W2969271188 hasAuthorship W2969271188A5038591871 @default.
• W2969271188 hasAuthorship W2969271188A5044080396 @default.
• W2969271188 hasAuthorship W2969271188A5054457069 @default.
• W2969271188 hasAuthorship W2969271188A5056525492 @default.
• W2969271188 hasAuthorship W2969271188A5084129737 @default.
• W2969271188 hasBestOaLocation W29692711882 @default.
• W2969271188 hasConcept C110738630 @default.
• W2969271188 hasConcept C120665830 @default.
• W2969271188 hasConcept C121332964 @default.
• W2969271188 hasConcept C146088050 @default.
• W2969271188 hasConcept C159122135 @default.
• W2969271188 hasConcept C159985019 @default.
• W2969271188 hasConcept C171250308 @default.
• W2969271188 hasConcept C185592680 @default.
• W2969271188 hasConcept C192562407 @default.
• W2969271188 hasConcept C21368211 @default.
• W2969271188 hasConcept C2778871202 @default.
• W2969271188 hasConcept C2779227376 @default.
• W2969271188 hasConcept C2780064504 @default.
• W2969271188 hasConcept C40003534 @default.
• W2969271188 hasConcept C49040817 @default.

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