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- W2969853380 abstract "Based on density functional theory, we have predicted a group of two-dimensional (2D) materials which contain IV and V elements with 3:1 stoichiometry, including C3N, C3P, C3As, Si3N, Si3P, Si3As, Ge3N, Ge3P and Ge3As. The structural, electronic, and optical properties of these compounds are theoretically discussed. Results suggest group IV–V monolayers have graphene-like structures with high kinetic and thermal stability. All the compounds exhibit semiconductor properties with band gaps ranging from 0.332 eV to 2.007 eV. The narrow band gaps indicate IV–V monolayers show excellent optical adsorption in visible light range. In addition, IV–V monolayers shows great anisotropy in electronic properties such as band structure and the electrons/hole effective mass." @default.
- W2969853380 created "2019-08-29" @default.
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- W2969853380 date "2019-12-01" @default.
- W2969853380 modified "2023-10-15" @default.
- W2969853380 title "Electronic properties of two-dimensional IV–V group materials from density functional theory" @default.
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- W2969853380 doi "https://doi.org/10.1016/j.apsusc.2019.143730" @default.
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