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- W2970125569 abstract "Nitrogen (N) is a potential acceptor dopant making a $p$ -type semiconductor of Ga 2 O 3 . Considering highly compensative nature of metal oxides, however, high dopant concentration with low defect density is essential to the acceptor activation. In this study, we employed nitric oxide (NO) as a source of O and N during pulsed-laser deposition (PLD) of $beta$ -Ga 2 O 3 :N films. The N concentration of the films prepared on $beta$ -Ga 2 O 3 (100) substrates was found to be ~1021 cm−3, which is the highest ever attained. Despite of such a high concentration, the films showed high crystallinity. Moreover, both of N concentration and crystallinity of the films grown under NO plasma increased with increasing growth temperature. As a result, highly insulating properties were obtained for films grown under NO plasma. These results suggest that PLD under NO plasma is effective for high concentration N-doping into device-grade $beta$ -Ga 2 O 3 films." @default.
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- W2970125569 date "2019-05-01" @default.
- W2970125569 modified "2023-09-23" @default.
- W2970125569 title "High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma" @default.
- W2970125569 doi "https://doi.org/10.1109/iciprm.2019.8819300" @default.
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