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- W2971355675 abstract "EUV lithography is being used at relatively high-k1 Rayleigh factors. Advancing EUV to smaller resolution requires several technological advancements. The EUV reticle is a strong contributor that limits current EUV imaging performance. Improvements with advanced mask types are required to reduce mask 3D effects and to improve image contrast. This will enable low-k1 resolution with reduced stochastic defect rates. In this paper we discuss what the requirements of high-k absorber masks and attenuated phase shift masks are to achieve optimal imaging performance. Recommendations on the mask stack composition and the application of mask types to different use cases are based on the physical understanding of the mask diffraction spectrum." @default.
- W2971355675 created "2019-09-05" @default.
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- W2971355675 date "2019-08-29" @default.
- W2971355675 modified "2023-10-17" @default.
- W2971355675 title "Alternative mask materials for low-k1 EUV imaging" @default.
- W2971355675 cites W2346466680 @default.
- W2971355675 doi "https://doi.org/10.1117/12.2535682" @default.
- W2971355675 hasPublicationYear "2019" @default.
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