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• W2972071211 abstract "The reliability degradation of HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> -based devices under heavy ion irradiation is still an open question. In this letter, the ultrathin amorphous HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate stacks were irradiated by different types of swift heavy ions (SHIs). The fine structure of latent track in amorphous HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> is crystalline phase along the particle trajectory. The effects of latent track on the electrical properties were characterized by the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) measurements. The quantitative relationship between microstructure changes and electrical properties provides a new method to estimate the threshold of the electronic energy loss ((dE/dx) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>e</sub> ) for crystallization and allows for prediction of device sensitivity to SHIs irradiation." @default.
• W2972071211 created "2019-09-12" @default.
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• W2972071211 date "2019-10-01" @default.
• W2972071211 modified "2023-10-16" @default.
• W2972071211 title "Latent Reliability Degradation of Ultrathin Amorphous HfO₂ Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization" @default.
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• W2972071211 doi "https://doi.org/10.1109/led.2019.2939002" @default.
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