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- W2972893993 abstract "Junction temperature sensing is an integral part of both on-line and off-line condition monitoring where direct access the bare die surface is not available. Given a defined power input, the junction temperature enables the estimation of the junction-to-case thermal resistance, which is a key indicator of packaging failure mechanisms like solder voiding and cracks. The use of temperature sensitive electrical parameters (TSEPs) has widely been proposed as a means of junction temperature sensing however, in SiC power devices there are certain challenges regarding the use of TSEPs. Bias Temperature Instability (BTI) from charge trapping in the gate dielectric causes threshold voltage drift, which in SiC affects some of the key TSEPs including ON-state resistance, body diode forward voltage as well as the turn-ON current commutation rate. This paper reviews the challenges of junction temperature sensing in SiC power devices, the impact of BTI on TSEPs and how different researchers have approached the issue of power cycling SiC power devices and modules." @default.
- W2972893993 created "2019-09-19" @default.
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- W2972893993 date "2019-05-01" @default.
- W2972893993 modified "2023-09-23" @default.
- W2972893993 title "Challenges of Junction Temperature Sensing in SiC Power MOSFETs" @default.
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- W2972893993 doi "https://doi.org/10.23919/icpe2019-ecceasia42246.2019.8797281" @default.
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