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• W2973137934 endingPage "092002" @default.
• W2973137934 startingPage "092002" @default.
• W2973137934 abstract "Abstract During the past decades, transition metal dichalcogenides (TMDs) have received special focus for their unique properties in photoelectric detection. As one important member of TMDs, MoS 2 has been made into photodetector purely or combined with other materials, such as graphene, ionic liquid, and ferroelectric materials. Here, we report a gate-free MoS 2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). In this device, the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope (PFM) probe with a positive or negative bias, which can turn the dipoles from disorder to be the same direction. Then, the MoS 2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation. Moreover, the P(VDF-TrFE) segregates MoS 2 from oxygen and water molecules around surroundings, which enables a cleaner surface state. As a photodetector, an ultra-low dark current of 10 –11 A, on/off ration of more than 10 4 and a fast photoresponse time of 120 μ s are achieved. This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications." @default.
• W2973137934 created "2019-09-19" @default.
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• W2973137934 date "2019-09-01" @default.
• W2973137934 modified "2023-10-18" @default.
• W2973137934 title "A gate-free MoS₂ phototransistor assisted by ferroelectrics" @default.
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• W2973137934 doi "https://doi.org/10.1088/1674-4926/40/9/092002" @default.
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