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- W2974759199 abstract "The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating without any resist-mask is in development. A thin multi-functional PVD Cu-Al stack is deposited to mask the ITO and to promote homogeneous current distribution for simultaneous bifacial plating. This investigation reviews different approaches to perform the Al-patterning – by printing of a metallic ink, laser metal transfer or selective metal etching – to produce a metal-seed susceptible to plate selectively against the self-passivated Al surface. This NOBLE – native oxide barrier layer for selective electroplated, metallization allows reaching a first promising efficiency of 20.0% on a full area SHJ solar cell with low contact resistivity to ITO. This simultaneous bifacial metallization features several advantages: low temperature processing, high metal conductivity of plated copper, no organic masking and low material costs (almost Ag-free)." @default.
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- W2974759199 date "2019-01-01" @default.
- W2974759199 modified "2023-09-30" @default.
- W2974759199 title "Advances with resist-free copper plating approaches for the metallization of silicon heterojunction solar cells" @default.
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- W2974759199 doi "https://doi.org/10.1063/1.5125875" @default.
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