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• W2976718812 abstract "While carbon doping is known to increase the resistivity of GaN, highly resistive layers for device isolation can also be obtained by ion implantation. In this study, we report on the electrical characterization of C-implanted n-type homoepitaxial GaN. Our investigation, carried out by capacitance-voltage measurements and deep level/minority carrier transient spectroscopy, revealed the presence of nine majority carrier traps in the 0.2–1.3 eV energy range, below the conduction band edge, and of four minority carrier traps, in the 0.1–1.4 eV energy range, above the valence band edge. The net-donor compensation mechanism and the behavior of defect centers are studied as a function of the annealing temperature in the 100–1000 °C range. While the former is explained in terms of dynamic annealing, the latter is discussed in the light of the present experimental results and those found in the literature." @default.
• W2976718812 created "2019-10-03" @default.
• W2976718812 creator A5005757859 @default.
• W2976718812 creator A5071838850 @default.
• W2976718812 date "2019-09-24" @default.
• W2976718812 modified "2023-10-18" @default.
• W2976718812 title "Defect energy levels in carbon implanted n-type homoepitaxial GaN" @default.
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• W2976718812 doi "https://doi.org/10.1063/1.5109237" @default.
• W2976718812 hasPublicationYear "2019" @default.
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