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• W2977465576 abstract "Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams." @default.
• W2977465576 created "2019-10-10" @default.
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• W2977465576 date "2019-10-01" @default.
• W2977465576 modified "2023-09-27" @default.
• W2977465576 title "Generation of boron ion beams by vacuum arc and planar magnetron ion sources" @default.
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• W2977465576 doi "https://doi.org/10.1063/1.5125704" @default.
• W2977465576 hasPublicationYear "2019" @default.
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