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- W2977472232 abstract "Abstract Heteroepitaxial growth of InAs on GaSb(0 0 1) by molecular beam epitaxy was investigated. Pits composed of high-index crystal planes easily formed on InAs surfaces at low growth temperatures. They were suppressed by adding traces of Sb, which has a surfactant effect. However, this caused the content of Sb in the InAs layer to be inhomogeneous. On the other hand, without irradiation by Sb, the size of the pits became smaller as the growth temperature increased. The pits were completely suppressed by applying a two-step growth sequence: initial growth at 400 °C followed by subsequent bulk growth at 520 °C. In this sequence, Sb carryover from the underlying GaSb was negligible and did not contribute to the elimination of the pits as a surfactant. Two factors seemed to be essential for suppressing the formation of pits: (1) initial planar growth of InAs on GaSb, which is favored at low temperature, and (2) preference for the (0 0 1) plane over high-index crystal planes at high temperature." @default.
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- W2977472232 date "2019-12-01" @default.
- W2977472232 modified "2023-10-14" @default.
- W2977472232 title "Suppression of three-dimensional pit formation of InAs on GaSb(0 0 1) by Sb-free two-step molecular beam epitaxy" @default.
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- W2977472232 doi "https://doi.org/10.1016/j.jcrysgro.2019.125269" @default.
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