FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2977990110> ?p ?o ?g. }

• W2977990110 endingPage "4104" @default.
• W2977990110 startingPage "4104" @default.
• W2977990110 abstract "This paper designs and investigates a novel structure of dual material gate-engineered heterostructure junctionless tunnel field-effect transistor (DMGE-HJLTFET) with a lightly doped source. Similar to the conventional HJLTFET, the proposed structure still adopts an InAs/GaAs0.1Sb0.9 heterojunction at source and channel interface and employs a polarization electric field at the arsenic heterojunction induced by the lattice mismatch in the InAs and GaAs0.1Sb0.9 zinc blende crystal to improve band to band tunneling (BTBT) current. However, the gate electrode is divided into three parts in DMGE-HJLTFET namely the auxiliary gate (M1), control gate (M2) and tunnel gate (M3) with workfunctions ΦM1, ΦM2 and ΦM3, where ΦM1 = ΦM3 < ΦM2, which not only improves ON-state current but also decreases the OFF-state current. In addition, a lightly doped source is used to further decrease the OFF-state current of this device. Simulation results indicate that DMGE-HJLTFET provides superior metrics in terms of logic and analog/radio frequency (RF) performance as compared with conventional HJLTFET, the maximum ON-state current and transconductance of the DMGE-HJLTFET increases up to 5.46 × 10−4 A/μm and 1.51 × 10−3 S/μm at 1.0 V drain-to-source voltage (Vds). Moreover, average subthreshold swing (SSave) of DMGE-HJLTFET is as low as 15.4 mV/Dec at low drain voltages. Also, DMGE-HJLTFET could achieve a maximum cut-off frequency (fT) of 423 GHz at 0.92 V gate-to-source voltage (Vgs) and a maximum gain bandwidth (GBW) of 82 GHz at Vgs = 0.88 V, respectively. Therefore, it has great potential in future ultra-low power integrated circuit applications." @default.
• W2977990110 created "2019-10-10" @default.
• W2977990110 creator A5011299124 @default.
• W2977990110 creator A5014548288 @default.
• W2977990110 creator A5052931863 @default.
• W2977990110 creator A5071150147 @default.
• W2977990110 creator A5071985886 @default.
• W2977990110 date "2019-10-01" @default.
• W2977990110 modified "2023-10-16" @default.
• W2977990110 title "Design and Investigation of a Dual Material Gate Arsenic Alloy Heterostructure Junctionless TFET with a Lightly Doped Source" @default.
• W2977990110 cites W1979598004 @default.
• W2977990110 cites W1983923555 @default.
• W2977990110 cites W1986486325 @default.
• W2977990110 cites W2005713153 @default.
• W2977990110 cites W2009176395 @default.
• W2977990110 cites W2022112852 @default.
• W2977990110 cites W2031010486 @default.
• W2977990110 cites W2047809533 @default.
• W2977990110 cites W2054781883 @default.
• W2977990110 cites W2110584581 @default.
• W2977990110 cites W2138654516 @default.
• W2977990110 cites W2140378133 @default.
• W2977990110 cites W2305410567 @default.
• W2977990110 cites W2410335047 @default.
• W2977990110 cites W2522052349 @default.
• W2977990110 cites W2546560046 @default.
• W2977990110 cites W2551832971 @default.
• W2977990110 cites W2575459479 @default.
• W2977990110 cites W2588084246 @default.
• W2977990110 cites W2591612882 @default.
• W2977990110 cites W2592564756 @default.
• W2977990110 cites W2596257285 @default.
• W2977990110 cites W2614585402 @default.
• W2977990110 cites W2621973451 @default.
• W2977990110 cites W2771422053 @default.
• W2977990110 cites W2891087053 @default.
• W2977990110 cites W2891866343 @default.
• W2977990110 cites W2894626381 @default.
• W2977990110 cites W2896624513 @default.
• W2977990110 cites W2899653226 @default.
• W2977990110 cites W2901888794 @default.
• W2977990110 cites W2912934146 @default.
• W2977990110 cites W2915685169 @default.
• W2977990110 cites W2916811893 @default.
• W2977990110 cites W2917819540 @default.
• W2977990110 cites W2919469493 @default.
• W2977990110 cites W2941684923 @default.
• W2977990110 cites W3102005610 @default.
• W2977990110 doi "https://doi.org/10.3390/app9194104" @default.
• W2977990110 hasPublicationYear "2019" @default.
• W2977990110 type Work @default.
• W2977990110 sameAs 2977990110 @default.
• W2977990110 citedByCount "7" @default.
• W2977990110 countsByYear W29779901102019 @default.
• W2977990110 countsByYear W29779901102020 @default.
• W2977990110 countsByYear W29779901102021 @default.
• W2977990110 countsByYear W29779901102022 @default.
• W2977990110 crossrefType "journal-article" @default.
• W2977990110 hasAuthorship W2977990110A5011299124 @default.
• W2977990110 hasAuthorship W2977990110A5014548288 @default.
• W2977990110 hasAuthorship W2977990110A5052931863 @default.
• W2977990110 hasAuthorship W2977990110A5071150147 @default.
• W2977990110 hasAuthorship W2977990110A5071985886 @default.
• W2977990110 hasBestOaLocation W29779901101 @default.
• W2977990110 hasConcept C119599485 @default.
• W2977990110 hasConcept C120398109 @default.
• W2977990110 hasConcept C127413603 @default.
• W2977990110 hasConcept C145598152 @default.
• W2977990110 hasConcept C165801399 @default.
• W2977990110 hasConcept C172385210 @default.
• W2977990110 hasConcept C192562407 @default.
• W2977990110 hasConcept C195370968 @default.
• W2977990110 hasConcept C2775945429 @default.
• W2977990110 hasConcept C2779283907 @default.
• W2977990110 hasConcept C2982823382 @default.
• W2977990110 hasConcept C49040817 @default.
• W2977990110 hasConcept C57863236 @default.
• W2977990110 hasConcept C79794668 @default.
• W2977990110 hasConceptScore W2977990110C119599485 @default.
• W2977990110 hasConceptScore W2977990110C120398109 @default.
• W2977990110 hasConceptScore W2977990110C127413603 @default.
• W2977990110 hasConceptScore W2977990110C145598152 @default.
• W2977990110 hasConceptScore W2977990110C165801399 @default.
• W2977990110 hasConceptScore W2977990110C172385210 @default.
• W2977990110 hasConceptScore W2977990110C192562407 @default.
• W2977990110 hasConceptScore W2977990110C195370968 @default.
• W2977990110 hasConceptScore W2977990110C2775945429 @default.
• W2977990110 hasConceptScore W2977990110C2779283907 @default.
• W2977990110 hasConceptScore W2977990110C2982823382 @default.
• W2977990110 hasConceptScore W2977990110C49040817 @default.
• W2977990110 hasConceptScore W2977990110C57863236 @default.
• W2977990110 hasConceptScore W2977990110C79794668 @default.
• W2977990110 hasFunder F4320335595 @default.
• W2977990110 hasIssue "19" @default.
• W2977990110 hasLocation W29779901101 @default.
• W2977990110 hasOpenAccess W2977990110 @default.
• W2977990110 hasPrimaryLocation W29779901101 @default.
• W2977990110 hasRelatedWork W2009231263 @default.

• next