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• W2978065475 abstract "We present a drain current model and a consistent parameter extraction method for organic field-effect transistors (OFETs) considering the gate voltage-dependent contact resistance and mobility by power-law. The physical origin of the asymptotic power-law dependence of contact resistance is elaborated based on the current crowding model. The parameters of a new model can be completely extracted without ambiguity by the proposed extraction method based on the linear fitting. Pentacene-based OFETs with the Au source/drain contact in a staggered configuration experimentally validate the proposed model and the extraction method, which further reveal the bulk resistivity as the major contribution to contact resistance." @default.
• W2978065475 created "2019-10-10" @default.
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• W2978065475 date "2019-11-01" @default.
• W2978065475 modified "2023-10-05" @default.
• W2978065475 title "A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility" @default.
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• W2978065475 doi "https://doi.org/10.1109/ted.2019.2941564" @default.
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