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• W2978952989 abstract "Abstract Pure ZnO and Ta doped ZnO films were prepared by magnetron sputtering and characterized by various techniques. The results indicated that Ta element was successfully doped in ZnO film. The grain size was decreased and the defect concentration was increased by the doping of Ta. The gas sensing test showed that the Ta dopants not only enhanced the response but also decreased the response/recovery time and improved the selectivity. The improvement in the gas sensing properties was ascribed to the modification in surface properties and the increase of defects due to the doping of Ta dopant." @default.
• W2978952989 created "2019-10-10" @default.
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• W2978952989 date "2019-12-01" @default.
• W2978952989 modified "2023-09-29" @default.
• W2978952989 title "Improved ethanol vapor sensing properties of sputtered ZnO films by doping Ta" @default.
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• W2978952989 doi "https://doi.org/10.1016/j.mtcomm.2019.100680" @default.
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