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- W2979545123 abstract "The SiC/SiO${}_{2}$ interface is a central component of many SiC electronic devices. Defects intrinsic to this interface can have a profound effect on device operation and reliability; it is therefore crucial to both understand the nature of these defects, and develop characterization methods to enable optimized SiC-based devices. The authors show confocal microscopy to be a noncontact, nondestructive, and spatially resolved means of addressing individual defects and assessing SiC/SiO${}_{2}$ interface quality. This may provide a more rapid method to optimize the SiC surface for future devices." @default.
- W2979545123 created "2019-10-18" @default.
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- W2979545123 date "2019-10-11" @default.
- W2979545123 modified "2023-10-09" @default.
- W2979545123 title "Optically Active Defects at the <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline overflow=scroll><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant=normal>C</mml:mi></mml:mrow><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant=normal>O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> Interface" @default.
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- W2979545123 doi "https://doi.org/10.1103/physrevapplied.12.044024" @default.
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