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• W2979605550 startingPage "3293" @default.
• W2979605550 abstract "In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures." @default.
• W2979605550 created "2019-10-18" @default.
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• W2979605550 date "2019-10-10" @default.
• W2979605550 modified "2023-10-10" @default.
• W2979605550 title "Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers" @default.
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• W2979605550 doi "https://doi.org/10.3390/ma12203293" @default.
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