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- W2980046594 abstract "In this paper we report a Schottky contact based UV detector over ultrathin (~25nm) radio frequency (RF) sputtered ZnO thin film probably for the first time. The substrate used was IC compatible Si instead of widely used sapphire substrate. The surface morphology, crystal phases, optical properties of the thin film were studied by atomic force microscopy, Field emission scanning electron microscopy, X-ray diffraction and photo luminance. The planner Schottky diode (Pd/ZnO/Ti/Au) was fabricated by photolithography beam evaporator and DC sputtering. The electrical properties of the diode were investigated by semiconductor parameter analyzer with micro probing arrangement. Different parameters of the diode like barrier height, ideality factor and reverse saturation current were estimated from I-V characteristics fitting with the Schottky Barrier Height theory. UV light of fixed frequencies and intensity were exposed on the diode and it was found that its different parameters changed." @default.
- W2980046594 created "2019-10-18" @default.
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- W2980046594 date "2019-10-23" @default.
- W2980046594 modified "2023-10-16" @default.
- W2980046594 title "Fabrication and characterization of Schottky diode on ultra thin ZnO film and its application for UV detection" @default.
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- W2980046594 doi "https://doi.org/10.1088/2053-1591/ab4cba" @default.
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