FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2980402241> ?p ?o ?g. }

• W2980402241 endingPage "2388" @default.
• W2980402241 startingPage "2380" @default.
• W2980402241 abstract "Tin disulfide (SnS2) has a larger band gap (>2.0 eV) than other two-dimensional (2D) materials, which can achieve a higher on/off current ratio, a much lower off-current, and standby power dissipation in future electronics. However, the defects in SnS2, such as sulfur vacancies, always result in very low carrier mobility and on/off current ratio, which are far behind their theoretical values. Herein, we report a synergistic effect of vacancy repairing and electron doping on SnS2 sheets introduced by ethylenediaminetetraacetic acid (EDTA) molecules decoration, which improves the electrical performance of FETs devices. XPS measurements reveal the EDTA can coordinate with the tin atom at the sulfur vacancy, thereby repairing it, while the Hall effect measurements show 1 order improvement of the electron concentration and Hall mobility, up to 4.14 × 1013/cm2 and 237.1 cm2/V·s after 0.3 mol/L EDTA treatment, respectively. Meanwhile, the top-gate FETs with h-BN dielectric layer demonstrate a promising field effect mobility of 8.77 cm2/V·s and a very large on/off ratio of 2 × 107, respectively. The off-current drops to 10–15 A, which guarantees a very low standby power dissipation. Furthermore, the same EDTA treatments were carried out on MoS2, WSe2, and GaSe sheets based FETs, resulting in improvement of electrical properties in n-type 2D materials (i.e., SnS2, MoS2), and deterioration in p-type ones (i.e., WSe2, GaSe), respectively. As a result, the proposed method could be a universal method for improving electrical properties of n-type 2D materials based devices." @default.
• W2980402241 created "2019-10-25" @default.
• W2980402241 creator A5002539686 @default.
• W2980402241 creator A5006504662 @default.
• W2980402241 creator A5014970619 @default.
• W2980402241 creator A5015357607 @default.
• W2980402241 creator A5021765493 @default.
• W2980402241 creator A5027240571 @default.
• W2980402241 creator A5032685046 @default.
• W2980402241 creator A5042853695 @default.
• W2980402241 creator A5063372408 @default.
• W2980402241 creator A5065977597 @default.
• W2980402241 creator A5080788081 @default.
• W2980402241 date "2019-10-15" @default.
• W2980402241 modified "2023-10-15" @default.
• W2980402241 title "Performance Improvement of Multilayered SnS₂ Field Effect Transistors through Synergistic Effect of Vacancy Repairing and Electron Doping Introduced by EDTA" @default.
• W2980402241 cites W1803273552 @default.
• W2980402241 cites W1932227871 @default.
• W2980402241 cites W1964685912 @default.
• W2980402241 cites W1968846510 @default.
• W2980402241 cites W1973598919 @default.
• W2980402241 cites W1975628705 @default.
• W2980402241 cites W1984790205 @default.
• W2980402241 cites W1985290174 @default.
• W2980402241 cites W2001077064 @default.
• W2980402241 cites W2017184887 @default.
• W2980402241 cites W2021994802 @default.
• W2980402241 cites W2024966938 @default.
• W2980402241 cites W2041311241 @default.
• W2980402241 cites W2042329348 @default.
• W2980402241 cites W2045065560 @default.
• W2980402241 cites W2046109069 @default.
• W2980402241 cites W2056587261 @default.
• W2980402241 cites W2073321070 @default.
• W2980402241 cites W2076563870 @default.
• W2980402241 cites W2096421416 @default.
• W2980402241 cites W2101606767 @default.
• W2980402241 cites W2118466746 @default.
• W2980402241 cites W2123510151 @default.
• W2980402241 cites W2125284466 @default.
• W2980402241 cites W2134233006 @default.
• W2980402241 cites W2136949760 @default.
• W2980402241 cites W2141958586 @default.
• W2980402241 cites W2163433444 @default.
• W2980402241 cites W2170412441 @default.
• W2980402241 cites W2222252800 @default.
• W2980402241 cites W2237532611 @default.
• W2980402241 cites W2324390857 @default.
• W2980402241 cites W2470170989 @default.
• W2980402241 cites W2471191437 @default.
• W2980402241 cites W2597054437 @default.
• W2980402241 cites W2602685009 @default.
• W2980402241 cites W2603764699 @default.
• W2980402241 cites W2648588734 @default.
• W2980402241 cites W2741962582 @default.
• W2980402241 cites W2783202263 @default.
• W2980402241 cites W2791561931 @default.
• W2980402241 cites W2800921889 @default.
• W2980402241 cites W2801466411 @default.
• W2980402241 cites W2804246160 @default.
• W2980402241 cites W2810153747 @default.
• W2980402241 cites W2837673212 @default.
• W2980402241 cites W2940612035 @default.
• W2980402241 cites W2962950708 @default.
• W2980402241 cites W2963391075 @default.
• W2980402241 cites W2963597307 @default.
• W2980402241 cites W3102402566 @default.
• W2980402241 cites W4236533514 @default.
• W2980402241 doi "https://doi.org/10.1021/acsaelm.9b00550" @default.
• W2980402241 hasPublicationYear "2019" @default.
• W2980402241 type Work @default.
• W2980402241 sameAs 2980402241 @default.
• W2980402241 citedByCount "24" @default.
• W2980402241 countsByYear W29804022412020 @default.
• W2980402241 countsByYear W29804022412021 @default.
• W2980402241 countsByYear W29804022412022 @default.
• W2980402241 countsByYear W29804022412023 @default.
• W2980402241 crossrefType "journal-article" @default.
• W2980402241 hasAuthorship W2980402241A5002539686 @default.
• W2980402241 hasAuthorship W2980402241A5006504662 @default.
• W2980402241 hasAuthorship W2980402241A5014970619 @default.
• W2980402241 hasAuthorship W2980402241A5015357607 @default.
• W2980402241 hasAuthorship W2980402241A5021765493 @default.
• W2980402241 hasAuthorship W2980402241A5027240571 @default.
• W2980402241 hasAuthorship W2980402241A5032685046 @default.
• W2980402241 hasAuthorship W2980402241A5042853695 @default.
• W2980402241 hasAuthorship W2980402241A5063372408 @default.
• W2980402241 hasAuthorship W2980402241A5065977597 @default.
• W2980402241 hasAuthorship W2980402241A5080788081 @default.
• W2980402241 hasBestOaLocation W29804022411 @default.
• W2980402241 hasConcept C106782819 @default.
• W2980402241 hasConcept C113196181 @default.
• W2980402241 hasConcept C114221277 @default.
• W2980402241 hasConcept C119599485 @default.
• W2980402241 hasConcept C127413603 @default.
• W2980402241 hasConcept C165801399 @default.
• W2980402241 hasConcept C171250308 @default.
• W2980402241 hasConcept C172385210 @default.

• next