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• W2980408043 endingPage "110230" @default.
• W2980408043 startingPage "110230" @default.
• W2980408043 abstract "The research of broadband photodetectors has been attracting extensive attention because of their great importance and application potentials in numerous fields. In this study, we proposed a perovskite-based photovoltaic broadband photodetector using silicon nanoporous pillar array (Si-NPA) as the hole-transport layer as well as the growth template. By optimizing the conditions of solvent vapors annealing approach, the conformal growth of high-quality CH3NH3PbI3 (MAPbI3) thin films was achieved with a high material integrity, thus enabling a rapid and efficient carrier transport at the MAPbI3/Si-NPA interface. The photoresponse analysis reveals that the devices exhibit a high light sensitivity from the deep ultraviolet to the near-infrared region and a pronounced photovoltaic behavior. Typically, a high on/off ratio of 0.82 × 105, a photoresponsivity of 8.13 mA/W, a specific detectivity of 0.974 × 1013 Jones, and fast response speeds of 253.3/230.4 μs were achieved at zero bias under light illumination of 780 nm. Because of the using of air-stable inorganic carrier-transport layers (Si-NPA, ZnO), and the coaxial core/shell heterojunction architecture for a full protection of vulnerable MAPbI3 active layer from exposure to air ambient, the photodetectors without encapsulation can operate with an excellent stability and repeatability in a wide frequency range over 5000 Hz and continuous light switching (1200 cycles). Even after one-month storage in air ambient, the devices can operate properly with only 8% photocurrent decay. The results obtained provide an effective strategy for the design and development of high-performance broadband photodetectors by combining the advantages of perovskites and functional Si-NPA template." @default.
• W2980408043 created "2019-10-25" @default.
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• W2980408043 date "2020-01-01" @default.
• W2980408043 modified "2023-10-17" @default.
• W2980408043 title "Photovoltaic broadband photodetectors based on CH3NH3PbI3 thin films grown on silicon nanoporous pillar array" @default.
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• W2980408043 doi "https://doi.org/10.1016/j.solmat.2019.110230" @default.
• W2980408043 hasPublicationYear "2020" @default.
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