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• W2980544227 abstract "Abstract This chapter gives an overview of physical compact models that describe the terminal electro-thermal behavior of III-Nitride devices. Device models are important since they act as a link between device-design stage and circuit/system-level design stage. Using equations that are grounded in physics, they are able to accurately capture device behavioral nuances and their impact on III-Nitride-based systems. Furthermore, they employ compact analytical expressions that distill the right amount of physics to achieve numerical and convergence robustness in large-scale circuit simulations: a key distinguishing factor from Technology-Computer Aided Design (TCAD) approach. This chapter highlights some of the tradeoffs involved in finding the right balance between physical accuracy and numerical robustness of compact models. Descriptions of common modeling practices to primarily describe lateral devices along with a brief overview of vertical III-Nitride devices are presented in the chapter. A survey of existing state-of-art physical models that are either charge-based or surface-potential-based are provided. Development of a compact model from fundamental transport and electrostatic theories is illustrated using the MIT-virtual source GaN-HEMT (MVSG) model for lateral GaN-high-electron mobility transistors (HEMTs) as an example case study. Demonstration of the capability of compact models to accurately predict device-characteristics such as DC- and pulsed-currents, charges, small-signal S-parameters, large-signal load-/source-pull and power sweeps, and inter-modulation distortion are presented. These device-level calibration tests are combined with numerical benchmark techniques in this chapter. The chapter also aims to tie device-physics of III-Nitride devices to circuit design through circuit-level evaluation. Benchmarking is conducted against switching characteristics of GaN-HEMT-converters in the HV-application regime to understand the impact of device capacitances, field plates, temperature and charge-trapping on switching slew rates. In the RF-application regime, validation is performed against output-power, efficiency, gain-compression and linearity characteristics of GaN-power amplifiers. Noise-figures of low-noise amplifiers are tested to estimate contributions of device-level noise sources." @default.
• W2980544227 created "2019-10-25" @default.
• W2980544227 creator A5011015676 @default.
• W2980544227 date "2019-01-01" @default.
• W2980544227 modified "2023-09-24" @default.
• W2980544227 title "Physics-based III-Nitride device modeling" @default.
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• W2980544227 doi "https://doi.org/10.1016/bs.semsem.2019.08.002" @default.
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