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- W2980777630 abstract "Abstract The Al-Zr-ZnO films was deposited on the surface of n-Si (111) by sol-gel method. The results showed that the average grain size of Al-Zr-ZnO films decreases due to ion doping concentration. Based on XPS analysis, the surface defect oxygen of Al-Zr-ZnO films decreases. As for graphene/ Al-Zr-ZnO schottky contact, barrier height increased and ideality factor decreased with the increasing of Al ion or Zr ion doping, indicating that the rectifying characteristics of graphene/Al-Zr-ZnO schottky contacts was enhanced due to ion co-doping. It can be explained that oxygen vacancies of Al-Zr-ZnO films decreases due to the ion doping and weakens Fermi level pinning." @default.
- W2980777630 created "2019-10-25" @default.
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- W2980777630 date "2020-01-06" @default.
- W2980777630 modified "2023-10-04" @default.
- W2980777630 title "Effect of Al–Zr co-doping on the electrical properties of graphene/ZnO Schottky contact" @default.
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- W2980777630 doi "https://doi.org/10.1088/2053-1591/ab4dd9" @default.
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