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• W2981085832 abstract "Undoped and boron- (B) doped VO2 thin films were successfully deposited by pulsed laser deposition. Boron doping enables to drastically reduce the metal–insulator transition (MIT) temperature (TMIT) at a rate as large as 31.5 °C/at.%B. As boron doping is interstitial, B atoms can be incorporated in the VO2 matrix without affecting its stoichiometry as demonstrated by the invariability of the valence state of vanadium ions. Therefore, boron doping stands as an efficient strategy to reduce TMIT toward room temperature, while maintaining the contrast of both electrical resistivity and infrared transmittance across the MIT suitable for applications such as smart radiators." @default.
• W2981085832 created "2019-10-25" @default.
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• W2981085832 date "2020-03-01" @default.
• W2981085832 modified "2023-10-13" @default.
• W2981085832 title "Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition" @default.
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• W2981085832 doi "https://doi.org/10.1016/j.scriptamat.2019.09.019" @default.
• W2981085832 hasPublicationYear "2020" @default.
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