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• W2981304889 abstract "This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level defects were analyzed. A significant improvement was obtained between 750 and 800 °C due to suppression of both the traps and the nonradiative recombination centers. They were distinguished using the DC bias dependence of admittance spectra and were reconfirmed from the electroluminescence and quantum efficiency spectroscopy studies." @default.
• W2981304889 created "2019-10-25" @default.
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• W2981304889 date "2019-10-14" @default.
• W2981304889 modified "2023-10-18" @default.
• W2981304889 title "Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs" @default.
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• W2981304889 doi "https://doi.org/10.1063/1.5111588" @default.
• W2981304889 hasPublicationYear "2019" @default.
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