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- W2981686518 abstract "In this paper, the structure of GaAs FET on a silicon substrate, suitable for local integration in the local SOI technology and the method of its electrophysical diagnostics based on changes in the thermal resistance (RT), is analyzed. It is known that the thermal conductivity of GaAs is 3-4 times worse than silicon. To eliminate this disadvantage, the technology of forming high-speed GaAs-structures on the surface of the silicon substrate was propoused." @default.
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- W2981686518 date "2019-09-15" @default.
- W2981686518 modified "2023-09-27" @default.
- W2981686518 title "Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications" @default.
- W2981686518 doi "https://doi.org/10.15330/pcss.20.3.311-317" @default.
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