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- W2981896716 abstract "Abstract Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × 10 10 Ω cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to self‐compensation and passivation of the acceptor. The acceptor can be identified as C N with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri‐carbon defects, C N ‐a‐C Ga ‐a‐C N and C N ‐a‐C Ga ‐c‐C N , are identified which probably compensate about two‐thirds of the carbon which is incorporated in excess of 2 × 10 18 cm −3 ." @default.
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- W2981896716 date "2019-10-22" @default.
- W2981896716 modified "2023-10-18" @default.
- W2981896716 title "Growth and Properties of Intentionally Carbon‐Doped GaN Layers" @default.
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- W2981896716 doi "https://doi.org/10.1002/crat.201900129" @default.
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