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- W2981917119 abstract "NH 3 -plasma treatment is used to improve the quality of the gate dielectric and interface. Al 2 O 3 is adopted as a buffer layer between HfO 2 and MoS 2 to decrease the interface-state density. Four groups of MOS capacitors and back-gate transistors with different gate dielectrics are fabricated and their C – V and I – V characteristics are compared. It is found that the Al 2 O 3 /HfO 2 back-gate transistor with NH 3 -plasma treatment shows the best electrical performance: high on–off current ratio of 1.53 × 10 7 , higher field-effect mobility of 26.51 cm 2 /V·s, and lower subthreshold swing of 145 mV/dec. These are attributed to the improvements of the gate dielectric and interface qualities by the NH 3 -plasma treatment and the addition of Al 2 O 3 as a buffer layer." @default.
- W2981917119 created "2019-11-01" @default.
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- W2981917119 date "2019-12-01" @default.
- W2981917119 modified "2023-09-26" @default.
- W2981917119 title "Improved performance of back-gate MoS<sub>2</sub> transistors by NH<sub>3</sub>-plasma treating high-k gate dielectrics*" @default.
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- W2981917119 doi "https://doi.org/10.1088/1674-1056/ab50fe" @default.
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