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• W2982219458 abstract "Abstract SiO2–C precursors with various surface areas were derived from tetraethyl orthosilicate and phenolic resin as Si and C sources, respectively, by a modified sol–gel process using the in situ precipitation of phenol resin in a prepared wet gel. The surface area of the SiO2–C precursors was varied from 20 to 175 m2/g by changing the C/Si molar ratio in the preform. β-SiC powders were synthesized using carbothermal reduction in vacuum at the temperature range of 1200–1600 °C. The effects of the temperature and heat treatment time as well as that of the surface area of the preform on the formation of β-SiC powders were studied. It was determined that the formation of β-SiC started at 1200 °C and was considerably promoted as the heat treatment temperature and time further increased during the carbothermal reduction of SiO2–C preforms with high surface area. When high surface area SiO2–C preforms were used, highly crystalline SiC powders were synthesized at 1600 °C in vacuum with a high yield of 85%." @default.
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• W2982219458 date "2020-03-01" @default.
• W2982219458 modified "2023-09-29" @default.
• W2982219458 title "Synthesis of β-SiC powders by the carbothermal reduction of porous SiO2–C hybrid precursors with controlled surface area" @default.
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• W2982219458 doi "https://doi.org/10.1016/j.ceramint.2019.10.223" @default.
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