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• W2982444468 abstract "Bottom-gate indium aluminum zinc oxide thin-film transistors (TFTs) are fabricated with a HfO2 dielectric layer using plasma enhanced atomic layer deposition (PEALD). The electrical properties and photoresponse are both affected by the method of post annealing. A device that is annealed at a temperature of less than 200°C has a better Ion/Ioff of $1.71times 10^{{8}}$ and a lower subthreshold swing (S.S.) of only 0.21 V/dec. This demonstrates that proper annealing treatment increases the performance of the device. The photoresponse is also calculated. A TFT that is not annealed has a poor photoresponse and a lower rejection ratio. Annealing at a temperature of less than 200 °C gives a good photoresponse of 0.2 A/W and a high rejection ratio of $2.86times 10^{{5}}$ . An IAZO TFT with a HfO2 dielectric layer that is deposited using PEALD is applicable in UV sensing technology." @default.
• W2982444468 created "2019-11-08" @default.
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• W2982444468 date "2020-02-15" @default.
• W2982444468 modified "2023-10-08" @default.
• W2982444468 title "Indium Aluminum Zinc Oxide Phototransistor With HfO2 Dielectric Layer Through Atomic Layer Deposition" @default.
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• W2982444468 doi "https://doi.org/10.1109/jsen.2019.2949907" @default.
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