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• W2982693008 abstract "A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe2 channel or an h-BN capping layer to achieve “1” or “0”, respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ∼1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ∼2.5 × 1012 cm–2, and an On/Off ratio exceeding 104 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). When the write time approaches 1 ms, the On/Off ratio remains >102, showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating." @default.
• W2982693008 created "2019-11-08" @default.
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• W2982693008 date "2019-10-29" @default.
• W2982693008 modified "2023-10-16" @default.
• W2982693008 title "Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory" @default.
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• W2982693008 doi "https://doi.org/10.1021/acs.nanolett.9b03792" @default.
• W2982693008 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/31661286" @default.
• W2982693008 hasPublicationYear "2019" @default.
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