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- W2982771322 abstract "The growth of Germanium (Ge) with iso-butyl germane (IBGe) as germanium source and the study of Ge memory effect in GaAs grown in UHV environment (Chemical beam epitaxy CBE reactor) is presented. High quality Ge epilayers were grown and a strong Ge memory effect was found in GaAs epilayers grown in the same reactor." @default.
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- W2982771322 date "2019-10-22" @default.
- W2982771322 modified "2023-09-28" @default.
- W2982771322 title "Growth and Memory Effect of Ge in GaAs Epilayers Grown in UHV Environment Using IBGe" @default.
- W2982771322 doi "https://doi.org/10.1149/09301.0113ecst" @default.
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