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• W2983994060 abstract "Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOS- FETs with polycrystalline Si Ge C gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si Ge gate layers. Boron accumulates in the poly Si Ge C layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si Ge C appears to be electrically active, providing similar device performance compared to the poly Si or poly Si Ge gated devices." @default.
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• W2983994060 date "2001-01-01" @default.
• W2983994060 modified "2023-09-27" @default.
• W2983994060 title "Suppression of Boron Penetration in P-Channel MOSFETs Using Polycrystalline Si Ge C Gate Layers" @default.
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