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- W2984453048 abstract "Ternary alloy Si1-x-yGexSny or GexSn1-x made up of group IV elements has been receiving attention from researchers in recent years due to its direct band gap nature. In this work, we investigate the performance of solar cells made with this alloy. We have proposed a n+ Si1-x-yGexSny (emitter)/p- Si1-xGex (absorber)/p- Si1-x-yGexSny (base) /p+ Si1-x-yGexSny (back surface field layer: BSF) based solar cell grown on Si1-x-yGexSny substrate. The calculated values are compared with the values for existing Si1-xGex solar cells and comparatively improved performances are obtained for the proposed structure. The effects of different absorber layer thickness, doping concentrations of the absorber and BSF layers, Ge concentration in Si1-xGex and Sn concentration in Si1-x-yGexSny are also studied for the proposed structure. Conversion efficiency is as high as 19.9 % for substrate thickness as low as 10 μm has been obtained for the proposed structure. The low value of substrate thickness and high efficiency make the proposed structure attractive as a low-cost device for applications in spacecraft and satellites." @default.
- W2984453048 created "2019-11-22" @default.
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- W2984453048 date "2020-02-01" @default.
- W2984453048 modified "2023-09-27" @default.
- W2984453048 title "Analysis of thin-film direct band-gap SiGeSn alloy based heterostructure solar cell featuring SiGe absorber layer" @default.
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- W2984453048 doi "https://doi.org/10.1016/j.ijleo.2019.163715" @default.
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