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• W2984991229 abstract "This study presents a photo-assisted method to measure the drift velocity of carriers in semiconductors, and successfully used to determine the drift velocity of holes in GaN. A p-i-n diode with a buried p-type layer was designed and fabricated on a free-standing GaN substrate. By reverse-biasing the p-i-n diode and illuminating the cathode layer using an ultraviolet light simultaneously, photo-generated holes were injected into the depletion region and accelerated by the electric field to reach the saturation velocity. The drift velocity (v <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</sub> )-electric field (E) characteristic can be obtained from the photocurrent induced by photo-generated holes. The measured hole drift velocity can be written as v <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</sub> = μ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>LF</sub> E/[1+( μ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>LF</sub> E/v <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sat</sub> ) <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>β</sup> ] <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1/β</sup> , where μ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>LF</sub> = 17 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs is the low-field hole mobility, v <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>sat</sub> = 6.63×10 <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sub> cm/s is the saturation velocity, β = 1.75 is the fitting parameter. The method presented in this study is a unique way of determining the saturation drift velocity of holes in GaN." @default.
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• W2984991229 date "2020-01-01" @default.
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• W2984991229 title "Experimental Determination of Velocity-Field Characteristic of Holes in GaN" @default.
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