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- W2986496621 abstract "An efficient way to improve thermoelectric (TE) performance of a system by adjusting the lattice strain (e.g., dislocation and nano-interface) without changing its composition is reported in this study. By controlling the crystallization and growth of Te nanoparticles, a Sb2Te3/Te heterostructure with enhanced TE properties is obtained. The growth of Te nanoparticles as well as the introduced lattice strain is characterized by X-ray diffraction, Raman, and high-resolution transmission electron microscopy in details. In addition to the low thermal conductivity (κ ) caused by lattice strain, the resulting stress on the heterostructure may lead to a state near electronic topological transition that enhances the power factor (PF ). As a result, the optimized figure-of-merit of the Sb2Te3/Te heterojunction reaches up to 0.61 at 300 K with PF and κ of 11.2 µW cm−1 K−2 and 0.55 W m−1 K−1, respectively. This method can also be applied in other heterojunction systems to improve TE properties." @default.
- W2986496621 created "2019-11-22" @default.
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- W2986496621 date "2019-11-12" @default.
- W2986496621 modified "2023-10-16" @default.
- W2986496621 title "Lattice Strain Enhances Thermoelectric Properties in Sb <sub>2</sub> Te <sub>3</sub> /Te Heterostructure" @default.
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- W2986496621 doi "https://doi.org/10.1002/aelm.201900735" @default.
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