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- W2987429807 abstract "Controlling the Schottky barrier at the interface between metal and the N-face n-GaN (N-GaN) is greatly vital to realize the high quality Ohmic contact. The effects of different defects on the n-type Schottky properties of Al(111) and N-GaN (Al/N-GaN) interface are studied using first-principles calculations. Our calculated results show that the n-type Schottky barrier height of Al/N-GaN interfaces is reduced by decorating defects like the nitrogen vacancy (VN) and the oxygen dopant at the nitrogen site (ON), and enhanced by introducing the gallium vacancy (VGa) and the ON−VGa complex. We demonstrate that the interface configuration and carrier transport properties play critical roles in controlling the Ohmic characteristics of metal-semiconductor contacts, based on which a schematic diagram for the formation mechanism of the n-type Schottky barrier height is established. Moreover, it is found that introducing donor defects at the Al/N-GaN interface with the ‘short’ Al–N bond results in the thinning of the depletion region and then enhances the tunneling, which is identified to be a better solution for improving the Ohmic contact of GaN-based LEDs. Our theoretical work enriches the fundamental understanding of the contact characteristics of Al/N-GaN and provides an important guide for designing the low-resistance N-GaN and metal contact devices." @default.
- W2987429807 created "2019-11-22" @default.
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- W2987429807 date "2020-03-01" @default.
- W2987429807 modified "2023-10-16" @default.
- W2987429807 title "Insight into the Al/N-GaN barrier property to realize high quality n-type Ohmic contact" @default.
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- W2987429807 doi "https://doi.org/10.1016/j.jallcom.2019.152855" @default.
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