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- W2988838799 abstract "A voltage-controlled, linear, nongrounded resistor in CMOS technology is presented. It is based on the conversion of the transconductance of the MOSFET in the saturated region to the drain-to-source resistance of the MOSFET in the nonsaturated region. A new approach to the realization of the known linearization technique is applied. Bisection of the input voltage of the controlled resistor is involved in this technique. Simulation results have shown a linearity error less than 0.58% of full scale in the 0 V to 7 V input voltage range." @default.
- W2988838799 created "2019-11-22" @default.
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- W2988838799 date "2001-01-01" @default.
- W2988838799 modified "2023-09-26" @default.
- W2988838799 title "A voltage-controlled resistor in CMOS technology using bisection of the voltage range" @default.
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- W2988838799 doi "https://doi.org/10.1109/19.982971" @default.
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