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- W2989793612 abstract "Abstract A graphene/In 2 O 3 bilayer (termed as GI-bilayer) is proposed as a transparent conducting electrode with remarkably improved areal-uniformity. To fabricate this new structure, an In 2 O 3 layer with a thickness of less than 50 nm was grown by atomic layer deposition and then a graphene layer was grown by chemical vapor deposition and subsequently transferred onto the as-grown In 2 O 3 layer. Electrical and optical properties of the GI-bilayer were systematically studied to verify effects of the underlying In 2 O 3 layer. Hall measurements and following analysis showed a conductance enhancement of the GI-bilayer owing to p -type doping of graphene. Specifically, Raman analysis and ultraviolet photoelectron spectroscopy were performed to prove p -type doping of the graphene in the GI-bilayer. In addition, the GI-bilayer exhibited the significantly improved uniformity of the sheet resistance compared to that of a conventional monolayer of graphene. There was a duality on the role of the In 2 O 3 underlayer in the GI-bilayer. It acted as a dopant layer to the graphene and lowered the sheet resistance from 863 to 510 Ω/sq as well as compensated microscale defects on graphene. More importantly, the In 2 O 3 underlayer resulted in the extremely reduced standard deviation of sheet resistance from 150 to 7.5 Ω/sq over the area of 49 cm 2 ." @default.
- W2989793612 created "2019-12-05" @default.
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- W2989793612 date "2019-12-11" @default.
- W2989793612 modified "2023-10-12" @default.
- W2989793612 title "Electrical properties of graphene/In<sub>2</sub>O<sub>3</sub> bilayer with remarkable uniformity as transparent conducting electrode" @default.
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- W2989793612 doi "https://doi.org/10.1088/1361-6528/ab599c" @default.
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